Critical layer thickness of GaIn N As Sb QWs on GaAs and InP substrates for 001 and 111 orientations

1270077
Uluslararası
Hakemli
SCI-Expanded
Critical layer thickness of GaIn N As Sb QWs on GaAs and InP substrates for 001 and 111 orientations
KÖKSAL KORAY,GÖNÜL BÜLENT,ODUNCUOĞLU MURAT
The European Physical Journal B
İngilizce
5
2009
69
2
211
218
1434-6028
Elektronik
Fen Bilimleri ve Matematik Temel Alanı->Fizik
767251
2016-01-08 22:01:41
Özgün Makale
http://www.springerlink.com/index/10.1140/epjb/e2009-00151-2